The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jul. 29, 2013
Nissan Chemical Industries, Ltd., Tokyo, JP;
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Abstract
A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1):RSi(R)  Formula (1)and compounds of Formula (2):RSi(R)Y  Formula (2)a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.