The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Jan. 03, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Je-Hsiung Jeffrey Lan, San Diego, CA (US);
Niranjan Sunil Mudakatte, San Diego, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Daeik Daniel Kim, Del Mar, CA (US);
Chengjie Zuo, San Diego, CA (US);
David Francis Berdy, San Diego, CA (US);
Mario Francisco Velez, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 23/15 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01G 2/02 (2006.01); H01G 4/005 (2006.01);
U.S. Cl.
CPC ...
H01L 27/01 (2013.01); H01G 2/02 (2013.01); H01L 21/4846 (2013.01); H01L 23/15 (2013.01); H01L 23/49822 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 28/10 (2013.01); H01L 28/75 (2013.01); H01G 4/005 (2013.01); H01L 23/49816 (2013.01); H01L 2224/11 (2013.01);
Abstract
A device includes a glass substrate and a capacitor. The capacitor includes a first metal coupled to a first electrode, a dielectric structure, and a via structure comprising a second electrode of the capacitor. The first metal structure is separated from the via structure by the dielectric structure.