The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Sep. 18, 2017
Asm Ip Holding B.v., Almere, NL;
Qi Xie, Leuven, BE;
Chiyu Zhu, Helsinki, FI;
Kiran Shrestha, Phoenix, AZ (US);
Pauline Calka, Leuven, BE;
Oreste Madia, Schaerbeek, BE;
Jan Willem Maes, Wilrijk, BE;
Michael Eugene Givens, Scottsdale, AZ (US);
ASM IP Holdings B.V., Almere, NL;
Abstract
A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.