The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Aug. 29, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jing-Sen Wang, Hsinchu, TW;
Yuan-Yao Chang, Kaohsiung County, TW;
Hung-Chi Chiu, Hsinchu County, TW;
Chia-Wei Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method, a test line and a system for detecting defects on a semiconductor wafer are presented. The method includes measuring a current-voltage (IV) curve of a plurality of metal oxide semiconductor (MOS) transistors which are connected in series in a test key; comparing the measured IV curve with a reference curve to obtain a first drain current drop in a linear region and a second drain current drop in a saturation region; and determining whether at least one of the MOS transistor among the MOS transistors of the test key is defected according to at least one of the first drain current drop and the second drain current drop.