The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Sep. 05, 2018
Alpha and Omega Semiconductor (Cayman) Ltd., Grand Cayman, KY;
Zhiqiang Niu, Santa Clara, CA (US);
Bum-Seok Suh, Seongnam, KR;
Jun Lu, San Jose, CA (US);
Son Tran, San Jose, CA (US);
Wanki Hong, Bucheon-si, KR;
Guobing Shen, Shanghai, CN;
Xiaoguang Zeng, Shanghai, CN;
Mary Jane R. Alin, Shanghai, CN;
ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD., Grand Cayman, KY;
Abstract
An intelligent power module (IPM) has a first, second, third and fourth die supporting elements, a first, second, third, fourth, fifth and sixth transistors, a connection member, a low voltage IC, a high voltage IC, a plurality of leads and a molding encapsulation. The first transistor is attached to the first die supporting element. The second transistor is attached to the second die supporting element. The third transistor is attached to the third die supporting element. The fourth, fifth and sixth transistor s are attached to the fourth die supporting element. The low and high voltage ICs are attached to the connection member. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first, second, third, fourth, fifth and sixth transistors, the connection member and the low and high voltage ICs. The IPM has a reduced thermal resistance of junction-to-case (RJC) compared to a conventional IPM.