The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Sep. 04, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lei Guo, Santa Clara, CA (US);

Praket P. Jha, San Jose, CA (US);

Milind Gadre, Los Altos, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Tza-Jing Gung, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); A01G 25/16 (2006.01); A01G 25/09 (2006.01); F16K 31/02 (2006.01); G05D 1/02 (2020.01); B25J 19/02 (2006.01); B25J 9/04 (2006.01); B25J 9/00 (2006.01); B25J 5/00 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
A01G 25/16 (2013.01); A01G 25/09 (2013.01); A01G 25/167 (2013.01); B25J 5/007 (2013.01); B25J 9/0087 (2013.01); B25J 9/046 (2013.01); B25J 19/02 (2013.01); C23C 16/401 (2013.01); C23C 16/50 (2013.01); F16K 31/02 (2013.01); G05D 1/024 (2013.01); G05D 1/0278 (2013.01); H01L 21/02164 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); G05B 2219/2625 (2013.01); G05D 2201/0201 (2013.01);
Abstract

Aspects disclosed herein relate to methods of depositing pure silicon oxide on a substrate using Octamethylcyclotetrasiloxane (OMCTS) precursor. In one aspect, the method generally includes positioning a substrate in a processing chamber, introducing an oxygen-containing gas into the processing chamber, introducing OMCTS precursor into the processing chamber, and reacting the oxygen-containing gas and the OMCTS precursor to remove carbon and deposit pure silicon oxide on the substrate.


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