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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10593783 B1

PDFFull Text
Date of Patent:
Mar. 17, 2020

Filed:

Feb. 13, 2019

Processing method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yusuke Takino, Miyagi, JP;

Kentarou Fujita, Miyagi, JP;

Yusuke Yanagisawa, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Roberts P Culbert

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01J 37/32 (2006.01); C23C 16/52 (2006.01); C23C 16/455 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); C23C 16/45536 (2013.01); C23C 16/52 (2013.01); H01J 37/32458 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/308 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 29/7851 (2013.01); H01J 2237/3341 (2013.01);
Abstract

In a processing method according to one exemplary embodiment, a first nitrified region of a workpiece is etched. The first nitrified region is provided on a first protrusion made of silicon. The workpiece further has a second protrusion, a second nitrified region, and an organic region. The second protrusion is made of silicon. The second nitrified region contains silicon and nitrogen and is provided on the second protrusion. The organic region covers the first and second protrusions and the first and second nitrified regions. In the processing method, the organic region is partially etched to expose the first nitrified region. Then, a silicon oxide film is formed to cover the surface of an intermediate product produced from the workpiece. Then, the silicon oxide film is etched to expose an upper surface of the first nitrified region. Then, the first nitrified region is isotropically etched.

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