The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Nov. 16, 2018
Infineon Technologies Ag, Neubiberg, DE;
Thomas Aichinger, Faak am See, AT;
Wolfgang Bergner, Klagenfurt, AT;
Paul Ellinghaus, Unterhaching, DE;
Rudolf Elpelt, Erlangen, DE;
Romain Esteve, Munich, DE;
Florian Grasse, Hohenthurn, AT;
Caspar Leendertz, Munich, DE;
Shiqin Niu, Freising, DE;
Dethard Peters, Hoechstadt, DE;
Ralf Siemieniec, Villach, AT;
Bernd Zippelius, Erlangen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
According to an embodiment of a semiconductor device, the device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of source regions of a first conductivity type are formed in the SiC substrate and extend lengthwise in parallel in a second direction which is transverse to the first direction. Rows of body regions of a second conductivity type opposite the first conductivity type are formed in the SiC substrate below the rows of source regions. Rows of body contact regions of the second conductivity type are formed in the SiC substrate. The rows of body contact regions extend lengthwise in parallel in the second direction. First shielding regions of the second conductivity type are formed deeper in the SiC substrate than the rows of body regions.