The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Nov. 13, 2018
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

The Regents of the University of California, Oakland, CA (US);

Inventors:

Raymond Hung, Palo Alto, CA (US);

Namsung Kim, Sunnyvale, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, Sunnyvale, CA (US);

Jong Choi, San Diego, CA (US);

Christopher Ahles, San Diego, CA (US);

Andrew Kummel, San Diego, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); C23C 16/46 (2006.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/08 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); C23C 16/0245 (2013.01); C23C 16/04 (2013.01); C23C 16/08 (2013.01); C23C 16/42 (2013.01); C23C 16/45527 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); C23C 16/46 (2013.01); H01L 21/28562 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01);
Abstract

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoFprecursor and a SiHprecursor which is followed by an additional SiHoverdose exposure to selectively deposit a MoSimaterial comprising MoSion the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.


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