The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Oct. 01, 2018
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Viet Thanh Dinh, Leuven, BE;

Marina Vroubel, Nijmegen, NL;

Paul Alexander Grudowski, Austin, TX (US);

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/417 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 27/0255 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01); H01L 29/402 (2013.01); H01L 29/417 (2013.01); H01L 29/66136 (2013.01);
Abstract

A semiconductor device comprising a pn junction diode and a method of making the same. The device includes a semiconductor substrate having a first conductivity type. The device also includes a buried oxide layer located in the substrate. The device further includes a semiconductor region having a second conductivity type extending beneath the buried oxide layer to form a pn junction with a semiconductor region having the first conductivity type. The pn junction is located beneath the buried oxide layer and extends substantially orthogonally with respect to a major surface of the substrate. The device also includes a field plate electrode comprising a semiconductor region located above the buried oxide layer for modifying an electric field at the pn junction by application of a potential to the field plate electrode.


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