The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jun. 19, 2018
Nxp Usa, Inc., Austin, TX (US);
Radu Mircea Secareanu, Phoenix, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A structure for improved noise signal isolation in semiconductor devices. In one embodiment, the structure includes a second-conductivity type substrate, a 1first-conductivity type well, a 1first-conductivity type layer, a second-conductivity type layer positioned between the 1first-conductivity type well and the 1first-conductivity type layer. The structure also includes a 2first-conductivity type well, and a 2first-conductivity type layer positioned between the 2first-conductivity type well and the 1first-conductivity type layer. The 1first-conductivity type layer and the second-conductivity type layer are positioned between the P type substrate and the 1first-conductivity type well, and the 1first-conductivity type well is laterally separated from the 2first-conductivity type well.