The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Mar. 06, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Kok Hin Teo, Schenectady, NY (US);

Jay A. Mody, Clifton Park, NY (US);

Jeffrey B. Riendeau, Ballston Lake, NY (US);

Philip V. Kaszuba, Essex Junction, VT (US);

Jian Qiu, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); G01N 21/95 (2006.01); G01N 21/88 (2006.01); G01R 31/265 (2006.01); G06T 7/521 (2017.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); G01N 21/8806 (2013.01); G01N 21/9501 (2013.01); G01R 31/2656 (2013.01); G06T 7/521 (2017.01); H01J 2237/24578 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2814 (2013.01);
Abstract

Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).


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