The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Apr. 06, 2018
Applicant:

Nuflare Technology, Inc., Yokohama-shi, JP;

Inventors:

Hiromu Inoue, Yokohama, JP;

Nobutaka Kikuiri, Koganei, JP;

Assignee:

NuFlare Technology, Inc., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/00 (2017.01); G03F 1/84 (2012.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
G06T 7/001 (2013.01); G01N 21/956 (2013.01); G01N 21/95607 (2013.01); G03F 1/84 (2013.01); G01N 2021/95676 (2013.01); G06T 2207/30148 (2013.01);
Abstract

A high resolution optical image is acquired by irradiating a mask with light emitted by a light source via a high resolution optical system. A low resolution optical image is acquired by irradiating the same mask with the light via a low resolution optical system. The design data of the mask pattern is corrected in light of shapes and dimensions determined according to at least one of a manufacturing process of the mask and a manufacturing process of a semiconductor device to be manufactured by transferring the mask pattern to a semiconductor wafer. Reference image data are generated corresponding to the high resolution optical image and the low resolution optical image. Whether the defect detected in the high resolution optical image is true or false is determined according to information of the defect detected in the low resolution optical image.


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