The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Mar. 13, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Jiaqi Yang, Shanghai, CN;
Jie Zhao, Shanghai, CN;
Abstract
A method of manufacturing a semiconductor device includes providing a substrate structure including a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, multiple trenches extending through the interlayer dielectric layer to the semiconductor substrate and including a first trench of a first NMOS device and a second trench of a second NMOS device, and a dielectric layer on sidewalls and a bottom of the trenches, forming an NMOS work function adjustment layer on the dielectric layer, performing a first oxidation treatment on the NMOS work function adjustment layer in the first trench to form a first oxide layer, and a second oxidation treatment on the NMOS work function adjustment layer in the second trench to form a second oxide layer, and forming a metal electrode layer in the trenches. The first oxide layer has an oxygen content lower than that of the second oxide layer.