The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Oct. 12, 2015
Applicant:

Aixtron SE, Herzogenrath, DE;

Inventors:

Kenneth B. K. Teo, Cambridgeshire, GB;

Alexandre Jouvray, Cambridgeshire, GB;

Jai Matharu, Hertfordshire, GB;

Simon Thomas, Cambridgeshire, GB;

Assignee:

AIXTRON SE, Herzogenrath, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); C23F 1/02 (2006.01); C23C 16/01 (2006.01); C01B 32/16 (2017.01); C01B 32/168 (2017.01); C01B 32/186 (2017.01); C01B 32/194 (2017.01); C23C 16/26 (2006.01); C01B 32/18 (2017.01); C23C 16/46 (2006.01); C23C 16/48 (2006.01); C23C 16/50 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C23C 16/01 (2013.01); C01B 32/16 (2017.08); C01B 32/168 (2017.08); C01B 32/18 (2017.08); C01B 32/186 (2017.08); C01B 32/194 (2017.08); C23C 16/26 (2013.01); C23C 16/46 (2013.01); C23C 16/48 (2013.01); C23C 16/50 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/734 (2013.01); Y10S 977/742 (2013.01); Y10S 977/762 (2013.01); Y10S 977/843 (2013.01);
Abstract

A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CVD reactor. The substrate comprising the seed structure () and the carbon structure () is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOX, AOXYor AX, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.


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