The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Apr. 28, 2017
Lam Research Corporation, Fremont, CA (US);
Kapu Sirish Reddy, Portland, OR (US);
Meliha Gozde Rainville, Lake Oswego, OR (US);
Nagraj Shankar, Tualatin, OR (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
David Charles Smith, Lake Oswego, OR (US);
Karthik Sivaramakrishnan, Tigard, OR (US);
David W. Porter, Sherwood, OR (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.