The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Dec. 18, 2015
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Shinichi Shinoda, Tokyo, JP;
Yasutaka Toyoda, Tokyo, JP;
Hiroyuki Ushiba, Tokyo, JP;
Hitoshi Sugahara, Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The purpose of the present invention is to provide an exposure condition evaluation device that appropriately evaluates a wafer exposure condition or calculates an appropriate exposure condition, on the basis of information obtained from an FEM wafer, without relying on the formation state of the FEM wafer. In order to achieve the foregoing, the present invention proposes an exposure condition evaluation device which evaluates an exposure condition of a reduction projection exposure device, on the basis of the information of patterns exposed on a sample by the reduction projection exposure device, and which uses a second feature amount of a plurality of patterns formed by making exposure conditions uniform to correct a first feature amount of a plurality of patterns formed by a plurality of different exposure condition settings.