The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Mar. 20, 2018
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Akira Takada, Shizuoka, JP;

Shuji Hirano, Shizuoka, JP;

Naoya Shimoju, Shizuoka, JP;

Toshiya Takahashi, Shizuoka, JP;

Hidehiro Mochizuki, Shizuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0758 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2037 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01);
Abstract

Provided are a resist composition capable of forming a pattern having excellent pattern collapse performance, particularly in the formation of an ultrafine pattern (for example, a pattern with a line width 50 nm or less) using the resist composition containing a resin (A) having a repeating unit (a) having an aromatic ring group and a repeating unit (b) having a silicon atom in a side chain, as well as a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the resist composition.


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