The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Aug. 30, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Hsiang Tsai, Hsinchu, TW;

Chung-Chuan Tseng, Hsinchu, TW;

Chia-Ping Lai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/308 (2013.01);
Abstract

A semiconductor structure includes a substrate having a trench array therein. The trench array includes a plurality of outer trenches adjacent to and extending along a periphery of the trench array and a plurality of inner trenches. Each of the plurality of outer trenches has a width greater than a width of each of the plurality of inner trenches. A capacitor material stack over the trench array.


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Tsai, Yu-Hsiang. (2020). Trench capacitor layout structure and method of forming same background (U.S. Patent No. 10546917). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10546917

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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