The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Jul. 18, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hideaki Yamasaki, Nirasaki, JP;

Takamichi Kikuchi, Nirasaki, JP;

Seishi Murakami, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01J 37/00 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01J 37/00 (2013.01); H01L 21/02063 (2013.01); H01L 21/02118 (2013.01); H01L 21/02205 (2013.01); H01L 21/02271 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67207 (2013.01); H01L 21/6831 (2013.01); H01L 21/76802 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/67167 (2013.01); H01L 21/6833 (2013.01);
Abstract

Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.


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