The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

May. 16, 2016
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Simon Ruffell, South Hampton, MA (US);

John Hautala, Beverly, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/68 (2006.01); H01J 37/32 (2006.01); C23C 14/04 (2006.01); H01J 37/34 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/40 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23C 14/046 (2013.01); C23C 16/042 (2013.01); C23C 16/045 (2013.01); C23C 16/047 (2013.01); C23C 16/402 (2013.01); C23C 16/4583 (2013.01); C23C 16/45523 (2013.01); C23C 16/50 (2013.01); H01J 37/3467 (2013.01); H01J 37/3476 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/76877 (2013.01);
Abstract

A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.


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