The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Apr. 25, 2018
Applicant:
Canon Anelva Corporation, Kawasaki-shi, JP;
Inventors:
Assignee:
CANON ANELVA CORPORATION, Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/30 (2006.01); H01J 37/305 (2006.01); H01L 23/544 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3056 (2013.01); H01J 37/32357 (2013.01); H01L 21/68764 (2013.01); H01L 23/544 (2013.01); H01J 2237/3345 (2013.01); H01J 2237/3347 (2013.01); H01L 43/12 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54493 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.