The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Oct. 26, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Rudolf Elpelt, Erlangen, DE;
Roland Rupp, Lauf, DE;
Reinhold Schoerner, Grossenseebach, DE;
Larissa Wehrhahn-Kilian, Erlangen, DE;
Bernd Zippelius, Erlangen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/046 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/8611 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01);
Abstract
In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.