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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10541303 B1

PDFFull Text
Date of Patent:
Jan. 21, 2020

Filed:

Jun. 01, 2018

Nanowire finfet transistor

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Aryan Afzalian, Chastre, BE;

Blandine Duriez, Brussels, BE;

Mark van Dal, Linden, BE;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Shahed Ahmed

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/1037 (2013.01); H01L 29/42356 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01); H01L 29/66742 (2013.01); H01L 29/66787 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01); H01L 29/7853 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract

Semiconductor devices and methods of forming the same are provided. A semiconductor device includes a substrate having a fin. A first nanowire is disposed on the fin and a second nanowire is disposed on the fin, the second nanowire being laterally separated from the first nanowire. A gate structure extends around the first nanowire and the second nanowire. The gate structure also extends over a top surface of the fin. The first nanowire, the second nanowire, and the fin form a channel of a transistor.

Find Patent Forward Citations

Afzalian, Aryan. (2020). Nanowire finfet transistor (U.S. Patent No. 10541303). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10541303

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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