The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Oct. 12, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Yukihiro Nagai, Saijo, JP;
Le-Tien Jung, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A semiconductor device includes a substrate having a cell region and a peripheral region, a thyristor on the cell region, a MOS transistor on the peripheral region, and a first silicide layer on the substrate adjacent to the thyristor on the cell region. Preferably, the thyristor includes: a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer on the cell region, vertical dielectric patterns in the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer, and first contact plugs on the fourth semiconductor layer.