The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Jan. 26, 2012
Thomas B. Richardson, Killingworth, CT (US);
Joseph A. Abys, Guilford, CT (US);
Wenbo Shao, Millford, CT (US);
Chen Wang, New Haven, CT (US);
Vincent Paneccasio, Jr., Madison, CT (US);
Cai Wang, Milford, CT (US);
Xuan Lin, Northford, CT (US);
Theodore Antonellis, Bethany, CT (US);
Thomas B. Richardson, Killingworth, CT (US);
Joseph A. Abys, Guilford, CT (US);
Wenbo Shao, Millford, CT (US);
Chen Wang, New Haven, CT (US);
Vincent Paneccasio, Jr., Madison, CT (US);
Cai Wang, Milford, CT (US);
Xuan Lin, Northford, CT (US);
Theodore Antonellis, Bethany, CT (US);
MACDERMID ENTHONE INC., Waterbury, CT (US);
Abstract
A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.