The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Jun. 01, 2018
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Christopher R. Hatem, Seabrook, NH (US);

Piero Sferlazzo, Marblehead, MA (US);

Roger Fish, Bedford, MA (US);

Dale K. Stone, Lynnfield, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/263 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/22 (2013.01); H01L 21/2636 (2013.01); H01L 21/823431 (2013.01);
Abstract

A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.


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