The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Oct. 27, 2017
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Fang-Liang Lu, New Taipei, TW;

Chia-Che Chung, Hsinchu, TW;

Yu-Jiun Peng, Taichung, TW;

Chee-Wee Liu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01);
Abstract

A semiconductor device includes a substrate, a channel structure, and a gate structure. The channel structure is over the substrate and extends along a first direction, in which the channel structure has plurality of first portions and plurality of second portions alternately stacked, and a width of the first portions is smaller than that of the second portions in a second direction different from the first direction. The gate structure is disposed over the substrate and crossing the channel structure along the second direction, in which the gate structure is in contact with the first portions and the second portions.


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