The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Aug. 01, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Sheng-Chau Chen, Tainan, TW;
Cheng-Tai Hsiao, Tainan, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Hsun-Chung Kuang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell disposed on a substrate, the MRAM cell comprises a magnetic tunnel junction (MTJ) disposed between a lower electrode and an upper electrode. A sidewall spacer arranged along opposite sidewalls of the MRAM cell. An upper interconnect wire directly contacting an upper surface of the upper electrode along an interface continuously extending from a first outer edge of the sidewall spacer to a second outer edge of the sidewall spacer.