The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Mar. 09, 2018
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Ashita Mirchandani, Torrance, CA (US);

Thomas Feil, Villach, AT;

Maximilian Roesch, St. Magdalen, AT;

Britta Wutte, Feistritz, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/0869 (2013.01); H01L 29/1095 (2013.01); H01L 29/405 (2013.01); H01L 29/407 (2013.01); H01L 29/7813 (2013.01);
Abstract

In an embodiment, a semiconductor device includes a semiconductor body having a field effect transistor device with an active region and an edge termination region that surrounds the active region on all sides. The active region includes a first serpentine trench in the semiconductor body, a first field plate in the first serpentine trench, a second serpentine trench in the semiconductor body, and a second field plate in the second serpentine trench. The first serpentine trench is separate and laterally spaced apart from the second serpentine trench.


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