The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Apr. 11, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chun-Ya Chiu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Chi-Ting Wu, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, a source/drain region, a source/drain contact structure, a first dielectric layer, a first spacer, and a first connection structure. The gate structure is disposed on the semiconductor substrate. The source/drain region is disposed in the semiconductor substrate and disposed at a side of the gate structure. The source/drain contact structure is disposed on the source/drain region. The first dielectric layer is disposed on the source/drain contact structure and the gate structure. The first spacer is disposed in a first contact hole penetrating the first dielectric layer on the source/drain contact structure. The first connection structure is disposed in the first contact hole. The first connection structure is surrounded by the first spacer in the first contact hole, and the first connection structure is connected with the source/drain contact structure.