The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Apr. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ju-Li Huang, Nantou County, TW;
Hsin-Che Chiang, Hsinchu, TW;
Ju-Yuan Tzeng, Hsinchu, TW;
Wei-Ze Xu, Hsinchu, TW;
Yueh-Yi Chen, Hsinchu, TW;
Shu-Hui Wang, Hsinchu, TW;
Shih-Hsun Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes removing a dummy gate structure formed over a first fin and a second fin, forming an interfacial layer in the first trench and the second trench, forming a first high-k dielectric layer over the interfacial layer in the first trench and the second trench, removing the first high-k dielectric layer in the second trench, forming a self-assembled monolayer over the first high-k dielectric layer in the first trench, forming a second high-k dielectric layer over the self-assembled monolayer in the first trench and over the interfacial layer in the second trench, forming a work function metal layer in the first and the second trenches, and forming a bulk conductive layer over the work function metal layer in the first and the second trenches. In some embodiments, the first high-k dielectric layer includes lanthanum and oxygen.