The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Dec. 15, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Kiyoshi Kato, Kanagawa, JP;
Tomoaki Atsumi, Kanagawa, JP;
Shunpei Yamazaki, Takyo, JP;
Haruyuki Baba, Kanagawa, JP;
Shinpei Matsuda, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device capable of holding data for a long time is provided. The semiconductor device includes a first transistor, a second transistor, and a circuit. The first transistor includes a first gate and a second gate. The first transistor includes a first semiconductor in a channel formation region. The first gate and the second gate overlap with each other in a region with the first semiconductor provided therebetween. The second transistor includes a second semiconductor in a channel formation region. A first terminal of the second transistor is electrically connected to a gate of the second transistor and the second gate. A second terminal of the second transistor is electrically connected to the circuit. The circuit has a function of generating a negative potential. The second semiconductor has a wider bandgap than the first semiconductor.