The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
May. 21, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Li Hui Lu, Shanghai, CN;
Chun Chao Fei, Shanghai, CN;
Po Yuan Chiang, Shanghai, CN;
Ya Ping Wang, Shanghai, CN;
Abstract
A method for fabricating a semiconductor structure includes forming a semiconductor chip. Forming the semiconductor chip includes providing a substrate, forming a connection layer on the substrate, and forming a first passivation layer on the substrate. The first passivation layer contains a plurality of first openings to expose the connection layer. Forming the semiconductor chip also includes forming a plurality of second openings and a plurality of third openings in the second passivation layer. Each second opening is formed in a first opening to expose the connection layer, and each third opening is formed outside of the plurality of first openings to expose the first passivation layer. Further, forming the semiconductor chip includes forming a conductive bump in each second opening.