The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Dec. 28, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes etching a semiconductor substrate to form a fin. An isolation structure is formed over the semiconductor substrate and around the fin. The isolation structure and the semiconductor substrate are etched to form a recess. A barrier layer is deposited over a bottom surface and a sidewall of the recess. A conductive layer is deposited over the barrier layer. The conductive layer is recessed to form a conductive line, in which a top surface of the conductive line is lower than a top surface of the isolation structure. A dielectric cap layer is formed over the conductive line. The isolation structure and the dielectric cap layer are recessed, such that the fin protrudes from the recessed isolation structure.