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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10520816 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Dec. 17, 2014

Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element

Applicant:

Hitachi Chemical Company, Ltd., Tokyo, JP;

Inventors:

Masakazu Kume, Tokyo, JP;

Momoko Munakata, Tokyo, JP;

Assignee:

HITACHI CHEMICAL COMPANY, LTD., Tokyo, JP;

Attorney:

Fitch, Even, Tabin & Flannery, LLP

Primary Examiner:

John S Chu

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/031 (2006.01); G03F 7/032 (2006.01); G03F 7/033 (2006.01); G03F 7/26 (2006.01); G03F 7/028 (2006.01); H05K 3/18 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01); H05K 3/06 (2006.01); G03F 7/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2008 (2013.01); G03F 7/027 (2013.01); G03F 7/028 (2013.01); G03F 7/031 (2013.01); G03F 7/032 (2013.01); G03F 7/033 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/26 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); H05K 3/064 (2013.01); H05K 3/18 (2013.01); H05K 3/184 (2013.01); H05K 3/06 (2013.01);
Abstract

An object is to provide a method for forming a resist pattern able to form a resist pattern, in which the resist shape is favorable, the occurrence of resist footing can be reduced, and the adherence and the aspect ratio are improved; and provided is a method for forming a resist pattern comprising a step of forming a photosensitive resin layer on a substrate using a photosensitive resin composition for projection exposure; a step of exposing the photosensitive resin layer to active light projecting an image of a photomask through a lens; and a step of removing an unexposed part of the photosensitive resin layer from the substrate by development, wherein the photosensitive resin composition for projection exposure comprises an (A) binder polymer, a (B) photopolymerizing compound having an ethylenically unsaturated bond, and a (C) photopolymerization initiator; and a light transmittance of the photosensitive resin layer at a wavelength of 365 nm is not less than 58.0% and not more than 95.0%.

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