The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Sep. 25, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Prashant Majhi, San Jose, CA (US);

Elijah V. Karpov, Santa Clara, CA (US);

Uday Shah, Portland, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Niloy Mukherjee, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); G11C 13/0007 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1666 (2013.01); G11C 2213/32 (2013.01); G11C 2213/51 (2013.01);
Abstract

An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; a first oxide layer between the OEL and the bottom electrode; and a second oxide layer between the first oxide layer and the bottom electrode; wherein (a) a first plurality of oxygen vacancies are within the first oxide layer and are adjacent the OEL at a first concentration, (b) a second plurality of oxygen vacancies are within the first oxide layer and are adjacent the second oxide layer at a second concentration that is less than the first concentration, and (c) the first oxide layer includes a first oxide material different from a second oxide material included in the second oxide layer. Other embodiments are described herein.


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