The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jun. 13, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/8252 (2006.01); H01L 29/417 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 21/0254 (2013.01); H01L 21/02609 (2013.01); H01L 21/8252 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42392 (2013.01); H01L 29/66522 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/41725 (2013.01);
Abstract
A tunnel field-effect transistor (TFET), comprising a first source/drain layer comprising a first polar sidewall; a second source/drain layer surrounding the first source/drain layer, wherein the second source/drain layer and the first source/drain layer are of opposite conductivity types; and a semiconductor interlayer between the second source/drain layer and first polar sidewall of the first source/drain layer.