The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Apr. 10, 2018
University of Houston System, Houston, TX (US);
Vincent M. Donnelly, Houston, TX (US);
Demetre J. Economou, Houston, TX (US);
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);
Abstract
A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.