The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Mar. 24, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Bharat Bhushan, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Wanbing Yi, Singapore, SG;

Danny Pak-Chum Shum, Singapore, SG;

Shan Gao, Singapore, SG;

Kangho Lee, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding and methods of forming a magnetic shield processed at the wafer-level are disclosed. The method includes providing a magnetic shield at the front side of the chip, back side of the chip, and also in the deep trenches surrounding or adjacent to magnetic tunnel junction (MTJ) array within the prime die region. Magnetic shield in the deep trenches connects front side and back side magnetic shield. This magnetic shielding method is applicable for both in-plane and perpendicular MRAM chips. The MTJ array is formed in the prime die region and in between adjacent inter layer dielectric (ILD) levels of the upper ILD layer in the back end of line (BEOL) of the MRAM chip.


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