The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jul. 19, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Wan-Yu Lee, Taipei, TW;
Ying-Hao Kuo, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/105 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 27/1464 (2013.01); H01L 27/14638 (2013.01); H01L 31/022408 (2013.01); H01L 31/0352 (2013.01); H01L 31/035236 (2013.01); H01L 31/105 (2013.01);
Abstract
A backside-illuminated photodetector structure includes a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.
Lee, Wan-Yu. (2019). Backside-illuminated photodetector structure and method of making the same (U.S. Patent No. 10510909). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10510909
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile