The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jun. 13, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-An Liu, Hsinchu, TW;
Chan-Lon Yang, Taipei, TW;
Bharath Kumar Pulicherla, Hsinchu, TW;
Zhi-Qiang Wu, Hsinchu County, TW;
Chung-Cheng Wu, Hsinchu County, TW;
Chih-Han Lin, Hsinchu, TW;
Gwan-Sin Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure is disclosed that includes the fin structure and the plurality of gates. The plurality of gates disposed with respect to the fin structure and including the first gate, the second gate, and the third gate. The spacing between the first gate and the second gate is smaller than the spacing between the second gate and the third gate. The second gate is disposed between the first gate and the third gate. The foot portion of the first gate, facing the second gate, and the first foot portion of the second gate, facing the first gate, have no lateral extension. The second foot portion of the second gate, facing the third gate, and the foot portion of the third gate, facing the second gate, have no lateral extension and/or cut.