The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Mar. 29, 2018
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jack Liu, Taipei, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Chew-Yuen Young, Cupertino, CA (US);
Sing-Kai Huang, Yunlin County, TW;
Ching-Fang Huang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a pair of transistor devices and an isolation region. The pair of transistor devices are disposed over the substrate. Each of the pair of the transistor devices includes a channel, a gate electrode over the channel, and a source/drain region alongside the gate electrode. The isolation region is disposed between the source/drain regions of the pair of the transistor devices. The isolation region has a first doping type opposite to a second doping type of the source/drain regions.