The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Aug. 15, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tsung-Yuan Yu, Taipei, TW;

Hao-Yi Tsai, Hsinchu, TW;

Chao-Wen Shih, Hsinchu, TW;

Hung-Yi Kuo, Taipei, TW;

Pi-Lan Chang, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/81125 (2013.01); H01L 2224/81815 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes: receiving a first substrate with a surface; receiving a second substrate; determining a pad array on the surface of the first substrate, wherein the pad array includes a first type pad and a second type pad; forming a via pattern underlying the pad array in the first substrate according to the location of each via, wherein the first type pad in the pad array is directly contacting a via of the via pattern and the second type pad in the pad array is clear of any via of the via pattern; laterally connecting the second type pad with a conductive trace, wherein the conductive trace connects to another via that is same level with the via contacting the first type pad; and disposing a first conductive bump and a second conductive bump between the first substrate and the second substrate.


Find Patent Forward Citations

Loading…