The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jul. 31, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chien-Hao Chung, Hsinchu, TW;
Chang-Sheng Lin, Baoshan Township, TW;
Kuo-Feng Huang, Tainan, TW;
Li-Chieh Wu, Hsinchu, TW;
Chun-Chieh Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/02074 (2013.01); H01L 21/76802 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 21/28518 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 23/485 (2013.01);
Abstract
A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.