The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Dec. 25, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shouguo Zhang, Singapore, SG;
Hai Tao Liu, Singapore, SG;
Ming Hua Du, Singapore, SG;
Yen-Chen Chen, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02019 (2013.01); H01L 21/02063 (2013.01); H01L 21/31 (2013.01); H01L 21/02266 (2013.01); H01L 21/2855 (2013.01);
Abstract
A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.