The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

May. 16, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Bruce A. Liikanen, Berthoud, CO (US);

Gerald L. Cadloni, Longmont, CO (US);

David Miller, Longmont, CO (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/07 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0632 (2013.01); G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/067 (2013.01); G06F 3/0619 (2013.01); G06F 3/0644 (2013.01); G06F 11/076 (2013.01); G06F 11/079 (2013.01); G06F 11/0727 (2013.01);
Abstract

A memory quality engine can improve the operation of a memory system by setting more effective operating parameters, disabling or removing memory devices unable to meet performance requirements, and providing evaluations between memory populations. These improvements can be accomplished by converting quality measurements of a memory population into CDF-based data, formulating comparisons of the CDF-based data to metrics for quality analysis, and applying the quality analysis. In some implementations, the metrics for quality analysis can use one or more thresholds, such as a system trigger threshold or an uncorrectable error correction condition threshold, which are set based on the error correction capabilities of a memory system. Formulating the comparison to these metrics can include determining an intersection between the CDF-based data and one of the thresholds.


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