The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jun. 22, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chin-Hsiung Hsu, Guanyin Township, TW;
Huang-Yu Chen, Zhudong Township, TW;
Tsong-Hua Ou, Taipei, TW;
Wen-Hao Chen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 3/06 (2006.01); G03F 7/20 (2006.01); H05K 3/00 (2006.01); G03F 1/70 (2012.01); G06F 17/50 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 1/70 (2013.01); G06F 17/5068 (2013.01); H01L 21/3213 (2013.01); H05K 3/0082 (2013.01); H05K 3/06 (2013.01); H05K 3/0005 (2013.01); H05K 3/068 (2013.01); H05K 2201/09781 (2013.01); H05K 2203/0557 (2013.01); H05K 2203/1476 (2013.01); Y10T 29/49156 (2015.01);
Abstract
A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate.