The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Aug. 24, 2017
Applied Materials Israel Ltd., Rehovot, IL;
Yotam Sofer, Givatayim, IL;
Ariel Hirszhorn, Ness-Ziona, IL;
Applied Materials Israel Ltd., Rehovot, IL;
Abstract
There is provided a method of examining defects in a semiconductor specimen and a system thereof. The method comprises: processing a first defect map obtained for a first semiconductor specimen to assign cluster-seed (CS) scores to at least some of the classified defects presented therein, wherein a CS score of a given defect is indicative of a number of neighboring defects classified to the same class as the given defect; upon obtaining a second defect map for a second semiconductor specimen, using the CS scores assigned to the at least some of the classified defects presented in the first defect map to select, among defects presented in the second defect map, defects for review, wherein the first defect map and the second defect map present respective defects in an attribute hyperspace; and reviewing defects selected in the second defect map, thereby obtaining classified defects presented in the second semiconductor specimen.