The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jul. 27, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Xuebin Li, Sunnyvale, CA (US);
Hua Chung, San Jose, CA (US);
Flora Fong-Song Chang, Saratoga, CA (US);
Schubert S. Chu, San Francisco, CA (US);
Abhishek Dube, Fremont, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/167 (2006.01); H01L 21/306 (2006.01); C30B 25/18 (2006.01); C30B 29/10 (2006.01); C23C 16/38 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); C23C 16/38 (2013.01); C30B 25/186 (2013.01); C30B 29/10 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02592 (2013.01); H01L 21/02614 (2013.01); H01L 21/30604 (2013.01); H01L 29/167 (2013.01); H01L 21/02661 (2013.01);
Abstract
A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.